Samsung unveils advanced 3D memory and storage technologies at Santa Clara show
Samsung introduced several next-generation memory products, including zHBM and V10 BV-NAND, at the Future of Memory and Storage event in Santa Clara.
During the Future of Memory and Storage (FMS) conference in Santa Clara, Samsung announced a suite of cutting-edge memory and storage products. Its zHBM design vertically integrates high-bandwidth memory atop AI accelerators, promising performance improvements of up to eight times and a tenfold increase in density over current HBM5, while cutting energy use by two thirds. The firm also launched V10 BV-NAND, a V-NAND flash chip that stacks over 400 layers, boosting capacity by about 58% and enhancing read/write speeds.
Complementary technologies include zNAND-O, aimed at edge-AI environments with high space efficiency, and LPDDR5X-PIM, the first low-power DDR memory featuring on-chip data processing. Samsung and SK Hynix remain the dominant players in the memory market, and the new products are expected to be absorbed largely by AI-driven data centers, intensifying existing supply pressures.
Why it matters
The launch signals faster, denser memory for AI data centers, but may worsen shortages and high prices for consumer devices.
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