Infineon to build Europe's first high-volume GaN chip fab in Villach
Infineon announced plans to create a high-volume gallium-nitride semiconductor production line on 300-mm wafers at its Villach site, with start-up slated for late 2027.
The German chip maker will expand its Villach facility to host the continent's first large-scale GaN wafer fab, using existing clean-room space for a cost-effective build-out. Funding from the Austrian government and EU approval under the Chips Act will support the project. Production is expected to begin by the end of 2027, and the new chips are aimed at boosting efficiency in AI data centers, energy grids, electric vehicles, robotics and consumer electronics.
Why it matters
The project will make Europe a leader in GaN chip production, enhancing tech competitiveness and energy efficiency.
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