Samsung to adopt TSMC's 3nm process for Nvidia's next-gen HBM chips

Samsung Electronics announced it will manufacture the base dies of Nvidia's next-generation custom high-bandwidth memory (NVHBM) using TSMC's 3-nanometre process, the first time the South Korean firm will partner with the Taiwanese chipmaker at this manufacturing stage. Nvidia has solicited Samsung, SK Hynix and Micron Technology to adopt TSMC's process for the base dies and to use sixth-generation DRAM technology for the core dies.

After an internal assessment, Samsung agreed to Nvidia's specifications but intends to retain its own production model for conventional HBM and other custom memory products. The Seoul Economic Daily reported that Samsung is also considering whether its own foundry could produce NVHBM base dies should demand exceed TSMC's capacity. This move reflects Nvidia's strategy to standardise memory implementation across multiple suppliers while integrating its custom controller into the base die.