Strained ultrathin ruthenium dioxide films reveal elusive altermagnetic behavior
Researchers demonstrated that ruthenium dioxide, normally non-magnetic, exhibits altermagnetism when fabricated as a strained ultrathin film.
In a study published in Science Advances, physicists Ming Yi, Bharat Jalan, Milan Radovic and collaborators reported that ruthenium dioxide, long considered non-magnetic in bulk, displays altermagnetic signatures when prepared as an epitaxially strained film only a few atomic layers thick. By probing the material’s spin texture with spin-resolved angle-resolved photoemission spectroscopy, they observed mirror-odd and mirror-even spin patterns consistent with the recently proposed altermagnetic phase.
The effect emerged only under lattice strain, indicating that mechanical deformation can act as a tuning knob for the magnetic order. The researchers argue that such strain-controlled altermagnetism could be valuable for next-generation spintronic and RAM technologies. The work was funded by the U.S. Department of Energy, the Gordon and Betty Moore Foundation’s EPiQS Initiative, and the Robert A. Welch Foundation.
Why it matters
Strain-tunable altermagnetism could lead to smaller, faster, and more energy-efficient computer memory.
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